MODELING OF MOS-TRANSISTORS WITH NONRECTANGULAR GATE GEOMETRIES - COMMENT

被引：2

作者：

DEMEY, G

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 07期

关键词：

D O I：

10.1109/T-ED.1983.21224

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：862 / 863

页数：2

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