PERFORMANCE OF BURIED NITRIDE CMOS DEVICES

被引：0
|
作者：
ZIMMER, G [1 ]
VOGT, H [1 ]
NEUBERT, E [1 ]
STAKS, P [1 ]
机构：
[1] UNIV DORTMUND,D-4600 DORTMUND 50,FED REP GER
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 11期
关键词：
D O I：
10.1109/T-ED.1983.21403
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1606 / 1607
页数：2
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