INVESTIGATION OF S-TYPE DIODES MADE OF RHODIUM-DOPED SILICON

被引：0
|
作者：
AZIMOV, SA [1 ]
KARIMOV, FR [1 ]
LEBEDEV, AA [1 ]
MAMADALIMOV, AT [1 ]
YUNUSOV, MS [1 ]
机构：
[1] AF IOFFE PHYSICOTECH INST,LENINGRAD,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 8卷 / 12期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1537 / 1539
页数：3
相关论文
共 50 条
  • [31] PHOTOELECTRIC PROPERTIES OF S-TYPE DIODES MADE OF CHROMIUM-DOPED GAAS AND EXHIBITING NEGATIVE-RESISTANCE UNDER A REVERSE BIAS
    KHLUDKOV, SS
    TOLBANOV, OP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (12): : 1434 - 1435
  • [32] PHOTOELECTRIC PROPERTIES OF GERMANIUM S-TYPE DIODES
    VILISOV, AA
    VORONKOV, VP
    DIAMANT, VM
    LOPATIN, LG
    PETROV, AS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 796 - 798
  • [33] NEGATIVE RESISTANCE DIODES MADE OF SILICON DOPED WITH MERCURY
    LEBEDEV, AA
    SULTANOV, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (02): : 276 - &
  • [34] INVESTIGATION OF S-TYPE DIODE NEURISTORS
    KOZLOV, NP
    MURYGIN, VI
    STAFEEV, VI
    SONDAEVS.IA
    LEVASHOV, IP
    POPOV, LV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (06): : 918 - &
  • [35] INVESTIGATION OF PHOTOCAPACITANCE OF DIODES MADE OF IRON-DOPED P-TYPE SI
    ABDUGAFUROVA, MA
    KAPITONOVA, LM
    KOSTINA, LS
    LEBEDEV, AA
    MAKHKAMOV, S
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (04): : 450 - 452
  • [36] SOME FEATURES OF PHOTOELECTRIC PROCESSES IN S-TYPE DIODES
    DULDIER, VN
    PETRUSEV.VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1429 - &
  • [37] IMPURITY RECOMBINATION RADIATION OF DIODES MADE OF INDIUM-DOPED N-TYPE SILICON
    POKROVSK.YE
    SVISTUNO.KI
    SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (05): : 1275 - +
  • [38] NEGATIVE PHOTOEFFECT IN DIODES MADE OF ZINC-DOPED P-TYPE SILICON CRYSTALS
    LEBEDEV, AA
    MAMADALI.AT
    SULTANOV, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (05): : 773 - &
  • [39] PRINCIPAL PARAMETERS OF DIODES MADE OF NICKEL-DOPED SILICON
    LEBEDEV, AA
    SULTANOV, NA
    MAMADALI.AT
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (12): : 1990 - &
  • [40] INFLUENCE OF A QUANTIZING MAGNETIC FIELD ON S-TYPE CURRENT-VOLTAGE CHARACTERISTICS OF DIODES MADE OF N-TYPE INSB
    SAIMKULO.ZA
    FILATOVA, ES
    YAGODKIN, VM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (12): : 2066 - &
12345