INVESTIGATION OF S-TYPE DIODES MADE OF RHODIUM-DOPED SILICON

被引：0
|
作者：
AZIMOV, SA [1 ]
KARIMOV, FR [1 ]
LEBEDEV, AA [1 ]
MAMADALIMOV, AT [1 ]
YUNUSOV, MS [1 ]
机构：
[1] AF IOFFE PHYSICOTECH INST,LENINGRAD,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 8卷 / 12期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：1537 / 1539
页数：3
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