THIN SIO2-FILMS NITRIDED BY RAPID THERMAL-PROCESSING IN NH3 OR N2O FOR APPLICATIONS IN EEPROMS

被引：10
|
作者：
DUTOIT, M
BOUVET, D
MI, J
NOVKOVSKI, N
LETOURNEAU, P
机构：
[1] Institute for Micro- and Optoelectronics, Swiss Federal Institute of Technology
来源：
MICROELECTRONICS JOURNAL | 1994年 / 25卷 / 07期
关键词：
D O I：
10.1016/0026-2692(94)90039-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin silicon dioxide (SiO2) films nitrided by rapid thermal processing (RTP) in ammonia and nitrous oxide are compared. Their electrical characteristics (oxide and interface trapped charge densities, resistance to high-field stress, breakdown charge) are correlated with the concentration of nitrogen at the Si/SiO2 interface. An optimum in several parameters is found for very light nitridations (0.5-1 at.% N). In this case, a significant improvement in the reliability of non-volatile memories (EEPROMs) is anticipated.
引用
收藏
页码：539 / 551
页数：13
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