Surface plasma passivation of the polycrystalline silicon thin films by using NH3 or N2O gas

The poly-Si thin film was passivated by using NH3 or N2O Plasma before deposition of gate diode. The poly-Si TFTs fabricated with this process have better electrical characteristics than those of conventional poly-Si TFT without NH3 or N2O plasma passivation. These devices also have better hot-carrier endurance and thermal stability. Both the nitrogen pile-up at the SiO2/poly-Si interface and the strong Si-N bond formation to terminate the dangling bonds at the grand boundaries of the poly-Si thin film in the channel region are the major causes.