THIN SIO2-FILMS NITRIDED BY RAPID THERMAL-PROCESSING IN NH3 OR N2O FOR APPLICATIONS IN EEPROMS

被引：10
|
作者：
DUTOIT, M
BOUVET, D
MI, J
NOVKOVSKI, N
LETOURNEAU, P
机构：
[1] Institute for Micro- and Optoelectronics, Swiss Federal Institute of Technology
来源：
MICROELECTRONICS JOURNAL | 1994年 / 25卷 / 07期
关键词：
D O I：
10.1016/0026-2692(94)90039-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin silicon dioxide (SiO2) films nitrided by rapid thermal processing (RTP) in ammonia and nitrous oxide are compared. Their electrical characteristics (oxide and interface trapped charge densities, resistance to high-field stress, breakdown charge) are correlated with the concentration of nitrogen at the Si/SiO2 interface. An optimum in several parameters is found for very light nitridations (0.5-1 at.% N). In this case, a significant improvement in the reliability of non-volatile memories (EEPROMs) is anticipated.
引用
收藏
页码：539 / 551
页数：13
相关论文
共 50 条
  • [31] CHARACTERIZATION OF THIN SIO2 GROWN BY RAPID THERMAL-PROCESSING AS INFLUENCED BY PROCESSING PARAMETERS
    EFTEKHARI, G
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (03) : 787 - 789
  • [32] THE FORMATION OF CUINSE2 THIN-FILMS BY RAPID THERMAL-PROCESSING
    MOONEY, GD
    HERMANN, AM
    TUTTLE, JR
    ALBIN, DS
    NOUFI, R
    SOLAR CELLS, 1991, 30 (1-4): : 69 - 77
  • [33] HIGH-FIELD PHENOMENA IN THIN PLASMA NITRIDED SIO2-FILMS
    ELSAYED, M
    DACOSTA, JC
    APPLIED SURFACE SCIENCE, 1987, 30 (1-4) : 229 - 236
  • [34] The formation of N2O during the reduction of NO by NH3
    Hou, Xiangsong
    Zhang, Hai
    Pilawska, Malgorzata
    Lu, Junfu
    Yue, Guangxi
    FUEL, 2008, 87 (15-16) : 3271 - 3277
  • [35] RAPID THERMAL-PROCESSING OF TIN AND TISI2 FILMS FOR VLSI APPLICATIONS
    COHEN, B
    NULMAN, J
    HERMAN, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C125 - C125
  • [36] DEUTERON BEAM ANALYSIS OF RAPID THERMAL NITRIDATION OF SILICON AND THIN SIO2-FILMS
    GANEM, JJ
    RIGO, S
    TRIMAILLE, I
    LU, GN
    MOLLE, P
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 64 (1-4): : 778 - 783
  • [37] CHARGE TRAPPING AND INTERFACE STATE GENERATION BY AVALANCHE HOT-ELECTRON INJECTION IN RAPID THERMAL NH3 ANNEALED AND REOXIDIZED SIO2-FILMS
    LIU, ZH
    CHEN, PS
    CHENG, YC
    LAI, PT
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (06) : 1871 - 1876
  • [38] THERMAL EMISSION OF TRAPPED HOLES IN THIN SIO2-FILMS
    LU, Y
    SAH, CT
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (05) : 3156 - 3159
  • [39] Electronic conduction in SiO2:N thin films grown by thermal oxidation of silicon in N2O
    Morales-Acevedo, A
    Santana, G
    Morales-Tzompa, E
    THIN SOLID FILMS, 2003, 436 (02) : 277 - 280
  • [40] REALIZATION OF MIS DIODES USING THIN SIO2-FILMS NITRIDED IN NH3 BY MEANS OF LOW-ENERGY (20-300-EV) ELECTRON-IRRADIATION
    GLACHANT, A
    DUBRAY, JJ
    BALLAND, B
    BENAMAR, A
    BUREAU, JC
    ANNALES DE PHYSIQUE, 1989, 14 (06) : 85 - 90
12345