RESIDUAL DEFECTS FOLLOWING RAPID THERMAL ANNEALING OF SHALLOW BORON AND BORON FLUORIDE IMPLANTS INTO PREAMORPHIZED SILICON

被引：80
|
作者：
CARTER, C
MASZARA, W
SADANA, DK
ROZGONYI, GA
LIU, J
WORTMAN, J
机构：
[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
[2] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27650
来源：
APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 04期
关键词：
D O I：
10.1063/1.94766
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：459 / 461
页数：3
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