A STUDY OF THE CONTRAST ON GROWTH STRIATIONS IN SILICON BY X-RAY DOUBLE CRYSTAL TOPOGRAPHY IN THE LAUE CASE

被引：4
|
作者：
KUBENA, J
HOLY, V
机构：
来源：
CZECHOSLOVAK JOURNAL OF PHYSICS | 1985年 / 35卷 / 09期
关键词：
D O I：
10.1007/BF01676362
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1007 / 1016
页数：10
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