A STUDY OF THE CONTRAST ON GROWTH STRIATIONS IN SILICON BY X-RAY DOUBLE CRYSTAL TOPOGRAPHY IN THE LAUE CASE

被引：4

|

作者：

KUBENA, J

HOLY, V

机构：

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 1985年 / 35卷 / 09期

关键词：

D O I：

10.1007/BF01676362

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

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页码：1007 / 1016

页数：10

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