Examination of surface-roughness of silicon crystals by double-crystal X-ray topography

被引：0
|
作者：
Niwano, Michio [1 ]
Kobayashi, Tadashi [1 ]
Miyamoto, Nobuo [1 ]
机构：
[1] Tohoku Univ, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27 pt 1卷 / 06期
关键词：
Semiconducting Silicon--Defects - Surfaces--Roughness Measurement;
D O I：
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中图分类号：
学科分类号：
摘要：
Double-crystal X-ray topography in the (+, -) Bragg-Bragg asymmetric arrangement is a very powerful tool to observe small strains in the vicinity of the surface in a nearly-perfect crystal. A new method of examining surface-roughness of silicon cystals, which uses the refraction effect in double-crystal X-ray topography, is proposed. It was shown that local slopes with an angle of inclination to a few tenths of a degree are detectable with this method.
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页码：1113 / 1114
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