Examination of surface-roughness of silicon crystals by double-crystal X-ray topography

被引：0

作者：

Niwano, Michio ^{[1
]}

Kobayashi, Tadashi ^{[1
]}

Miyamoto, Nobuo ^{[1
]}

机构：

[1] Tohoku Univ, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27 pt 1卷 / 06期

关键词：

Semiconducting Silicon--Defects - Surfaces--Roughness Measurement;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Double-crystal X-ray topography in the (+, -) Bragg-Bragg asymmetric arrangement is a very powerful tool to observe small strains in the vicinity of the surface in a nearly-perfect crystal. A new method of examining surface-roughness of silicon cystals, which uses the refraction effect in double-crystal X-ray topography, is proposed. It was shown that local slopes with an angle of inclination to a few tenths of a degree are detectable with this method.

引用

页码：1113 / 1114

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