Elimination of extrinsic components overlapping lattice distortion variations of a silicon single crystal obtained by double-crystal X-ray topography

被引:1
|
作者
Kudo, Y
Liu, KY
Kawado, S
Hirano, K
机构
[1] Sony Corp, Res Ctr, Hodogaya Ku, Yokohama, Kanagawa 2400036, Japan
[2] High Energy Accelerator Res Org, Inst Mat Struct Sci, Photon Factory, Tsukuba, Ibaraki 3050801, Japan
关键词
D O I
10.1107/S0021889899015484
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Variations in lattice plane spacing and lattice plane orientation, i.e, Delta d/d and Delta alpha, reflect variations in lattice distortion in a single crystal. Double-crystal S-ray topography (DCT) using synchrotron radiation can be used to measure Delta d/d and Delta alpha of a silicon single crystal. However, both Delta d/d and Delta alpha measured using DCT are always overlapped by extrinsic components, showing particular long-range variations. The extrinsic components should be eliminated from the measured Delta d/d and Delta alpha for quantitative characterization of silicon single crystals. A sample-rotation and area-detector-traverse (RT) method, applicable to X-ray optics for DCT, has been newly developed. The extrinsic components are eliminated by modification of the intensity distribution on the X-ray topographs using the RT method. From theoretical considerations, it is confirmed that the extrinsic components are mainly due to the (+,-) nonparallel setting between the monochromator and the collimator, and a minute bend in the sample due to its physical restraint. (C): 2000 International Union of Crystallography Printed in treat Britain - all rights reserved.
引用
收藏
页码:226 / 233
页数:8
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