INTRINSIC DEFECTS IN SILICON AND THEIR INTERACTION WITH BORON IMPURITIES AT LOW-TEMPERATURES

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作者：
EMTSEV, VV
MASHOVETS, TV
NAZARYAN, EK
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 10期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1225 / 1227
页数：3
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