INTRINSIC DEFECTS IN SILICON AND THEIR INTERACTION WITH BORON IMPURITIES AT LOW-TEMPERATURES

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作者：

EMTSEV, VV

MASHOVETS, TV

NAZARYAN, EK

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 10期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：1225 / 1227

页数：3

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