HIGH-FREQUENCY OPERATION OF LATERAL HOT-ELECTRON TRANSISTORS

被引：17
|
作者：
RYZHII, V
KHRENOV, G
机构：
[1] Department of Computer Hardware, University of Aizu
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 01期
关键词：
D O I：
10.1109/16.370021
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The high-frequency operation of a lateral hot-electron transistor (LHET) with near ballistic transport in the base and collector is considered. The high-frequency efficiency of the hot-electron transport in the base and collector are evaluated. It is shown that due to two-dimensional electron gas the high-frequency properties of the LHET collector are quite different from the properties of the hot-electron transistors with vertical structure,
引用
收藏
页码：166 / 171
页数：6
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