FREQUENCY-DEPENDENT COLLECTOR TRANSPORT FACTOR OF LATERAL HOT-ELECTRON TRANSISTOR

被引：1
|
作者：
KHRENOV, G
RYZHII, V
机构：
[1] Department of Computer Hardware, University of Aizu, Aizu-Wakamatsu
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 4A期
关键词：
LATERAL HOT-ELECTRON TRANSISTOR; HIGH-FREQUENCY PERFORMANCE;
D O I：
10.1143/JJAP.34.1796
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The high-frequency operation of a lateral hot-electron transistor is discussed. Analytical expressions for the induced collector current and collector transport factor are found and analyzed. It is shown that lateral geometry of the transistor results in specific features of the frequency dependence of the collector transport factor, namely, slower degradation at high frequencies in comparison with the same parameter of the hot-electron transistor with vertical structure.
引用
收藏
页码：1796 / 1799
页数：4
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