RAMAN-SCATTERING FROM ULTRAHEAVILY-ION-IMPLANTED AND LASER-ANNEALED SILICON

被引：10
|
作者：
SHUKLA, AK
JAIN, KP
机构：
来源：
PHYSICAL REVIEW B | 1986年 / 34卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.34.8950
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：8950 / 8953
页数：4
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