XPS STUDY OF LASER-ANNEALED ION-IMPLANTED GAAS

被引：3
|
作者：
KRASTEV, V
MARINOVA, T
KARPUZOV, D
KALITZOVA, M
VITALI, G
ROSSI, M
机构：
[1] BULGARIAN ACAD SCI,INST ELECTR,BU-1784 SOFIA,BULGARIA
[2] BULGARIAN ACAD SCI,INST SOLID STATE PHYS,BU-1784 SOFIA,BULGARIA
[3] UNIV ROMA LA SAPIENZA,DEPT ENERGET,I-00161 ROME,ITALY
来源：
SURFACE AND INTERFACE ANALYSIS | 1993年 / 20卷 / 12期
关键词：
D O I：
10.1002/sia.740201205
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Data on the effects of 140 keV Zn+ implanation of (100)GaAs and the consequent low-power pulsed laser annealing (LPPLA) on the composition of the surface layers are presented. The implantation dose was 10(14) cm(-2) and the sample temperature was kept at 110 +/- 10 OC. The LPPLA was carried out by 10-30 pulses of a Q-switched ruby laser (lambda = 694.3 nm, tau = 25 ns and P-0 = 4-6 MW cm(-2)) equipped with a spatial homogenizer. The crystal surface was studied by XPS analysis combined with depth profiling with the use of 1 keV Ar+. The results presented include the depth redistribution of oxygen and the As/Ga ratio as well as the oxide thickness for (a) virgin, (b) as-implanted and (c) implanted and then annealed samples.
引用
收藏
页码：955 / 958
页数：4
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