INTENSITY OSCILLATIONS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH

被引：182

|

作者：

SAKAMOTO, T

KAWAI, NJ

NAKAGAWA, T

OHTA, K

KOJIMA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.96091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：617 / 619

页数：3

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