INTENSITY OSCILLATIONS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH

被引：182
|
作者：
SAKAMOTO, T
KAWAI, NJ
NAKAGAWA, T
OHTA, K
KOJIMA, T
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 06期
关键词：
D O I：
10.1063/1.96091
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：617 / 619
页数：3
相关论文
共 50 条
  • [21] MECHANISM OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY ON A SI(001) SURFACE
    MITSUISHI, K
    HASHIMOTO, I
    SAKAMOTO, K
    SAKAMOTO, T
    WATANABE, K
    PHYSICAL REVIEW B, 1995, 52 (15): : 10748 - 10751
  • [22] OBSERVATIONS ON INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAS SOURCE MOLECULAR-BEAM EPITAXY OF INP
    MORISHITA, Y
    MARUNO, S
    GOTODA, M
    NOMURA, Y
    OGATA, H
    APPLIED PHYSICS LETTERS, 1988, 53 (01) : 42 - 44
  • [23] MOLECULAR-BEAM EPITAXIAL-GROWTH CONDITION DEPENDENCE OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DAMPENING AND QUANTUM-WELL PHOTOLUMINESCENCE
    BLOCK, TR
    NEIKIRK, DP
    STREETMAN, BG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 791 - 794
  • [24] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND OPTICAL MEASUREMENTS ON THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF ONE AND 2 MONOLAYERS OF INAS ON GAAS
    DOSANJH, SS
    DAWSON, P
    FAHY, MR
    JOYCE, BA
    MURRAY, R
    TOYOSHIMA, H
    ZHANG, XM
    STRADLING, RA
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (03) : 1242 - 1247
  • [25] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND MOLECULAR-BEAM EPITAXY
    DOBSON, PJ
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (98): : 1 - 8
  • [26] STEP-DENSITY VARIATIONS AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING EPITAXIAL-GROWTH ON VICINAL GAAS(001)
    SHITARA, T
    VVEDENSKY, DD
    WILBY, MR
    ZHANG, J
    NEAVE, JH
    JOYCE, BA
    PHYSICAL REVIEW B, 1992, 46 (11): : 6815 - 6824
  • [27] ON THE PERIOD OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING SI MOLECULAR-BEAM EPITAXY ON VICINAL SI(001)
    ZANDVLIET, HJW
    ELSWIJK, HB
    DIJKKAMP, D
    VANLOENEN, EJ
    DIELEMAN, J
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) : 2614 - 2617
  • [28] MONOLAYER TO BILAYER TRANSITION IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING SI(001) MOLECULAR-BEAM EPITAXY
    CLARKE, S
    WILBY, MR
    VVEDENSKY, DD
    KAWAMURA, T
    SAKAMOTO, T
    APPLIED PHYSICS LETTERS, 1989, 54 (24) : 2417 - 2418
  • [29] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OBSERVATION OF SUBSTRATE CLEANING DURING SILICON MOLECULAR-BEAM EPITAXY
    KANG, TW
    HUANG, CF
    KARUNASIRI, RPG
    PARK, JS
    CHERN, CH
    WANG, KL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C546 - C546
  • [30] REFLECTION ELECTRON-DIFFRACTION INTENSITY OSCILLATION DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF (GAAS)N/(INAS)N SUPERLATTICE SEMICONDUCTOR
    OHNO, H
    KATSUMI, R
    HASEGAWA, H
    SURFACE SCIENCE, 1986, 174 (1-3) : 598 - 599
12345