INVESTIGATION OF PB1-XEUXTE MOLECULAR-BEAM EPITAXY BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS

被引：15

作者：

SPRINGHOLZ, G

BAUER, G

机构：

[1] Institut für Halbleiterphysik, Johannes Kepler Universität Linz

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 13期

关键词：

D O I：

10.1063/1.107238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reflection high-energy electron diffraction (RHEED) intensity oscillations were observed for the molecular-beam epitaxial growth of Pb1-xEuxTe. For the first time, the influence of vapor composition and surface condition on the damping of the intensity oscillations was studied in ternary IV-VI compounds. The shape of the RHEED intensity oscillations is found to depend critically not only on the Eu-to-Te2 beam-flux ratio, but also on the initial state and the stoichiometry of the surface. For growth on a Te-stabilized surface with Te-rich beam-flux composition, optimum growth conditions were found with up to N = 380 oscillation periods.

引用

页码：1600 / 1602

页数：3

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