SOURCES OF OXIDATION INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON WAFERS - ONE-TO-ONE CORRELATION WITH BULK DEFECTS

被引：0

作者：

ROZGONYI, GA ^{[1
]}

MAHAJAN, S ^{[1
]}

READ, MH ^{[1
]}

BRASEN, D ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C275 / C275

页数：1

共 50 条

[21] Generation of oxidation induced stacking faults in CZ silicon wafers
Sueoka, K.
Akatsuka, M.
Nishihara, K.
Yamamoto, T.
Kobayashi, S.
Materials Science Forum, 1995, 196-201 (pt 4) : 1737 - 1742
[22] Generation of oxidation induced stacking faults in CZ silicon wafers
Sueoka, K
Akatsuka, M
Nishihara, K
Yamamoto, T
Kobayashi, S
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1737 - 1741
[23] TEMPERATURE-DEPENDENCE OF OXIDATION INDUCED STACKING-FAULTS AND OXYGEN INCORPORATION IN DISLOCATION-FREE CZOCHRALSKI SILICON
BAWA, MS
BELL, WJ
GRIMES, HM
SHAFFNER, TJ
JOURNAL OF CRYSTAL GROWTH, 1989, 94 (03) : 803 - 806
[24] ORIGINS OF OXIDATION-INDUCED STACKING-FAULTS IN N-TYPE (100)-ORIENTED SILICON-WAFERS
CHENG, D
HAHN, S
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C91 - C91
[25] CONTROL OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON BY CHLORINE IMPLANTATION
KAWADO, S
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (02) : 225 - 232
[26] Oxidation-induced stacking faults in nitrogen doped Czochralski silicon
Yang, DR
Chu, J
Ma, XY
Li, LB
Que, DL
SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2, 2002, 2002 (02): : 273 - 279
[27] Model for the formation of oxidation-induced stacking faults in Czochralski silicon
Sadamitsu, Shinsuke, 1600, JJAP, Minato-ku, Japan (34):
[28] GETTERING OF COPPER BY BULK STACKING-FAULTS AND PUNCHED-OUT DISLOCATIONS IN CZOCHRALSKI-GROWN SILICON
SHEN, B
SEKIGUCHI, T
JABLONSKI, J
SUMINO, K
JOURNAL OF APPLIED PHYSICS, 1994, 76 (08) : 4540 - 4546
[29] ELIMINATION OF STACKING-FAULTS IN SILICON WAFERS BY HCL ADDED DRY O2 OXIDATION
SHIRAKI, H
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (06) : 747 - 752
[30] ROLE OF POINT-DEFECTS IN THE GROWTH OF THE OXIDATION-INDUCED STACKING-FAULTS IN SILICON - RETROGROWTH AND EFFECT OF HCL OXIDATION
MURARKA, SP
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C92 - C92

← 1 2 3 4 5 →