670-NM ALGAINP GAINP STRAINED MULTIQUANTUM-WELL LASER-DIODE WITH HIGH CHARACTERISTIC TEMPERATURE (T(0))

A 670 nm AlGalnP/GalnP strained multi-quantum well laser diode with a high characteristic temperature (T0) has been achieved by optimization of quantum well structures and the metal-organic chemical vapour deposition process. The hole concentration of 5 x 10(17) cm-3 in the p-AlGalnP cladding layer on a (100) 5-degrees off GaAs substrate has been obtained with very small ratio, 0.35, of mole flow rate of zinc source to the group III sources ([DEZn]/[III] of 0.35. The threshold current and maximum temperature for continuous wave operation of lasers with cavity length of 300 mum have been measured as 45 mA and 80-degrees-C, respectively. The characteristic temperature (T0) of the lasers has been measured as high as 153 K. The laser without facet protections could operate for more than 1000h at 50-degrees-C and 5 mW.