30 MW 690 NM HIGH-POWER STRAINED QUANTUM-WELL ALGAINP LASER

被引：0

作者：

UENO, Y

FUJII, H

SAWANO, H

KOBAYASHI, K

HARA, K

GOMYO, A

ENDO, K

机构：

来源：

NEC RESEARCH & DEVELOPMENT | 1992年 / 33卷 / 03期

关键词：

ALGAINP LASER; HIGH POWER; STRAINED QUANTUM WELL; STABLE OPERATION; OPTICAL DISK MEMORY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-power 690 nm AlGaInP laser has been successfully developed for use in a high-density rewritable optical disk memory system. Laser characteristics are improved by using strained Quantum Wells (QWs) as the active layer. 40 mW output power is achieved at up to 80-degrees-C. Stable fundamental-transverse-mode operation is obtained at up to 50 mW. The lasers demonstrate 30 mW stable operation at 50-degrees-C for over 2,600 hours. The mean extrapolated lifetime is as long as 10(4) hours.

引用

页码：393 / 400

页数：8

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