HIGH-POWER CONTINUOUS-WAVE 690-NM ALGAINP LASER-DIODE ARRAYS

被引：11
|
作者：
SKIDMORE, JA
EMANUEL, MA
BEACH, RJ
BENETT, WJ
FREITAS, BL
CARLSON, NW
SOLARZ, RW
机构：
[1] Lawrence Livermore National Laboratory, L-495, Livermore, CA 94550
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 10期
关键词：
D O I：
10.1063/1.113844
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-power diode laser arrays emitting at 690 nm have been developed for solid-state laser pumping. The laser diode bars (fill factor ≈0.7) have been fabricated from single quantum well AlGaInP-based heterostructures. Using silicon microchannel heatsinks, a record high 360 W/cm2 per emitting aperture is achieved under continuous wave operation.
引用
收藏
页码：1163 / 1165
页数：3
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