HIGH-POWER CW OPERATION OF ALGAINP LASER-DIODE ARRAY OF 640 NM

被引：9

作者：

SKIDMORE, JA ^{[1
]}

EMANUEL, MA ^{[1
]}

BEACH, RJ ^{[1
]}

BENETT, WJ ^{[1
]}

FREITAS, BL ^{[1
]}

CARLSON, NW ^{[1
]}

SOLARZ, RW ^{[1
]}

BOUR, DP ^{[1
]}

TREAT, DW ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 02期

关键词：

D O I：

10.1109/68.345900

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Visible-emitting high-power laser bars are investigated at an emission wavelength of 640 nm. AlGaInP/GaInP, single tensile-strained quantum well, separate confinement heterostructures are fabricated into one cm long laser bars using a 0.7 fill factor. The low threshold current of the diode, combined with the aggressive heatsinking of a silicon microchannel cooler has resulted in more than 12 W of continuous wave output power.

引用

页码：133 / 135

页数：3

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