AN ALGAINP VISIBLE LASER-DIODE

We have developed a novel, real-index guided AlGalnP visible laser diode, called a self-aligned stepped substrate (S-3) laser. To realize a self-aligned laser structure using only single-step metalorganic vapor phase epitaxy (MOVPE), we used simultaneous doping and alternate doping of Zn and Se on a stepped substrate. The technique is based on the dependence of impurity incorporation on substrate orientation. The S-3 laser with a strained GalnAsP multiquantum-well active layer exhibits high-power operation with good beam characteristics, reliability, and production yield.