670-NM ALGAINP GAINP STRAINED MULTIQUANTUM-WELL LASER-DIODE WITH HIGH CHARACTERISTIC TEMPERATURE (T(0))

被引：2

作者：

KIM, JS

YANG, M

CHOI, WJ

CHANG, JH

CHO, IS

CHOI, WT

YOO, TK

机构：

[1] LG Electronics Research Center, Seoul, 137-140, 16 Woomyeon-Dong, Seocho-Gu

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1995年 / 27卷 / 05期

关键词：

D O I：

10.1007/BF00563580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 670 nm AlGalnP/GalnP strained multi-quantum well laser diode with a high characteristic temperature (T0) has been achieved by optimization of quantum well structures and the metal-organic chemical vapour deposition process. The hole concentration of 5 x 10(17) cm-3 in the p-AlGalnP cladding layer on a (100) 5-degrees off GaAs substrate has been obtained with very small ratio, 0.35, of mole flow rate of zinc source to the group III sources ([DEZn]/[III] of 0.35. The threshold current and maximum temperature for continuous wave operation of lasers with cavity length of 300 mum have been measured as 45 mA and 80-degrees-C, respectively. The characteristic temperature (T0) of the lasers has been measured as high as 153 K. The laser without facet protections could operate for more than 1000h at 50-degrees-C and 5 mW.

引用

页码：435 / 440

页数：6

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