INSITU IR SPECTROSCOPIC STUDY OF A-SI-H THIN-FILMS UNDER PHOTOCHEMICAL VAPOR-DEPOSITION CONDITIONS

被引：0
|
作者：
WADAYAMA, T [1 ]
SUETAKA, W [1 ]
机构：
[1] TOHOKU UNIV,FAC ENGN,DEPT MAT SCI,SENDAI,MIYAGI 980,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 8B期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C444 / C444
页数：1
相关论文
共 50 条
  • [41] VOLATILITIES OF PRECURSORS FOR CHEMICAL VAPOR-DEPOSITION OF SUPERCONDUCTING THIN-FILMS
    YUHYA, S
    KIKUCHI, K
    YOSHIDA, M
    SUGAWARA, K
    SHIOHARA, Y
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 1990, 184 : 231 - 235
  • [42] THIN-FILMS FORMED BY PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
    ILLIC, DB
    HEWLETT-PACKARD JOURNAL, 1982, 33 (08): : 24 - 27
  • [43] DIRECT FORMATION OF POLYIMIDE THIN-FILMS BY VAPOR-DEPOSITION POLYMERIZATION
    KUBONO, A
    HIGUCHI, H
    UMEMOTO, S
    OKUI, N
    THIN SOLID FILMS, 1993, 232 (02) : 256 - 260
  • [44] PARAMAGNETIC NITROGEN IN CHEMICAL VAPOR-DEPOSITION DIAMOND THIN-FILMS
    HOINKIS, M
    WEBER, ER
    LANDSTRASS, MI
    PLANO, MA
    HAN, S
    KANIA, DR
    APPLIED PHYSICS LETTERS, 1991, 59 (15) : 1870 - 1872
  • [45] CHEMICAL VAPOR-DEPOSITION OF VANADIUM-OXIDE THIN-FILMS
    SIEFERING, KL
    GRIFFIN, GL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (03) : 897 - 898
  • [46] CHEMICAL VAPOR-DEPOSITION OF THIN-FILMS OF FERROELECTRIC LEAD TITANATE
    YOON, SG
    KIM, HG
    FERROELECTRICS, 1989, 89 : 91 - 97
  • [47] SODIUM-FLUORIDE THIN-FILMS BY CHEMICAL VAPOR-DEPOSITION
    LINGG, LJ
    BERRY, AD
    PURDY, AP
    EWING, KJ
    THIN SOLID FILMS, 1992, 209 (01) : 9 - 16
  • [48] EFFECTS OF THE REACTION PRESSURE ON THE GROWTH OF PBTIO3 THIN-FILMS BY THE PHOTOCHEMICAL VAPOR-DEPOSITION METHOD
    ANDO, A
    KATAYAMA, T
    SHIMIZU, M
    SHIOSAKI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (9B): : 3001 - 3004
  • [49] PHOTOCHEMICAL VAPOR-DEPOSITION OF AL2O3 THIN-FILMS WITH HIGH QUANTUM YIELD
    FUKUSHIMA, Y
    HIGASHINO, T
    MATSUMURA, N
    SARAIE, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (3A): : L261 - L264
  • [50] INSITU STUDY OF THE SI-H BOND IN A-SI-H ULTRATHIN FILMS
    BLAYO, N
    BLOM, P
    DREVILLON, B
    PHYSICA B, 1991, 170 (1-4): : 566 - 570
12345