INSITU STUDY OF THE SI-H BOND IN A-SI-H ULTRATHIN FILMS

被引：7
|
作者：
BLAYO, N
BLOM, P
DREVILLON, B
机构：
[1] Laboratoire de Physique des Interfaces et des Couches Minces, UPR A258 du CNRS, Ecole Polytechnique
来源：
PHYSICA B | 1991年 / 170卷 / 1-4期
关键词：
D O I：
10.1016/0921-4526(91)90179-I
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A preliminary in situ analysis of the growth mechanisms and vibrational properties of plasma deposited amorphous silicon (a-Si:H) ultrathin films (d(f) < 200 angstrom) is is presented. The hydrogen incorporation, as a function of the film thickness and the influence of the nature of the substrate on the early stage of the growth are studied by a new infrared phase modulated ellipsometer (IRPME). The Si-H bond (near 1990 cm-1) is evidenced for the first time on films as thin as approximately 5 angstrom. This new ellipsometer offers extremely high resolution thanks to a very small noise (0.02-degrees in PSI and DELTA).
引用
收藏
页码：566 / 570
页数：5
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