ELECTRON CHANNELING IN THE SCANNING ELECTRON-MICROSCOPE FOR MONITORING THE THICKNESSES OF RESIDUAL OXIDE-FILMS ON SEMICONDUCTOR SUBSTRATES

被引：0

作者：

VINOGRADOVA, NS

NOSIKOV, SV

SOROKIN, IN

SOSNOVSKIKH, YN

机构：

来源：

INDUSTRIAL LABORATORY | 1986年 / 52卷 / 12期

关键词：

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：1107 / 1108

页数：2

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[41] HIGH-RESOLUTION ELECTRON-MICROSCOPE STUDIES OF PASSIVE OXIDE-FILMS ON IRON IN AQUEOUS-SOLUTIONS
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[44] CATHODOLUMINESCENCE MEASUREMENTS USING THE SCANNING ELECTRON-MICROSCOPE FOR THE DETERMINATION OF SEMICONDUCTOR PARAMETERS
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[47] ELECTRON-SCATTERING BY GAS IN THE SCANNING ELECTRON-MICROSCOPE
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[48] AUGER-ELECTRON SPECTROSCOPY IN SCANNING ELECTRON-MICROSCOPE
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[49] USE OF CHANNELTRON AS ELECTRON DETECTOR IN SCANNING ELECTRON-MICROSCOPE
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[50] SECONDARY-ELECTRON DETECTION IN THE SCANNING ELECTRON-MICROSCOPE
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