HOLE TRAPPING AND BREAKDOWN IN THIN SIO2

被引：103
|
作者：
CHEN, IC
HOLLAND, S
HU, CM
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 03期
关键词：
D O I：
10.1109/EDL.1986.26332
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：164 / 167
页数：4
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