CORRELATION OF BREAKDOWN SUSCEPTIBILITY IN THIN THERMAL SIO2 WITH PROCESS-DEPENDENT POSITIVE CHARGE TRAPPING

被引：0
|
作者：
HOLLAND, S [1 ]
HU, C [1 ]
机构：
[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C101 / C101
页数：1
相关论文
共 50 条
  • [1] CORRELATION BETWEEN BREAKDOWN AND PROCESS-INDUCED POSITIVE CHARGE TRAPPING IN THIN THERMAL SIO2
    HOLLAND, S
    HU, C
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : 1705 - 1712
  • [2] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2
    CHEN, IC
    HOLLAND, S
    HU, CM
    IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 164 - 167
  • [3] Charge trapping in thin SiO2 layers. Application to the breakdown of MOS
    Blaise, G
    IEEE 1996 ANNUAL REPORT - CONFERENCE ON ELECTRICAL INSULATION AND DIELECTRIC PHENOMENA, VOLS I & II, 1996, : 24 - 27
  • [4] CHARGE TRAPPING AND BREAKDOWN IN THIN SIO2 POLYSILICON-GATE MOS CAPACITORS
    DUTOIT, M
    FAZAN, P
    BENJELLOUN, A
    ILEGEMS, M
    MORET, JM
    APPLIED SURFACE SCIENCE, 1987, 30 (1-4) : 333 - 338
  • [5] CHARGE TRAPPING IN SIO2
    YOUNG, DR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C138 - C138
  • [6] CHARGE TRAPPING IN SIO2
    YOUNG, DR
    AIP CONFERENCE PROCEEDINGS, 1984, (122) : 1 - 7
  • [7] CHARGE TUNNELING AND TRAPPING AND TRAP GENERATION IN THIN SIO2
    CHANG, C
    LIANG, MS
    HU, C
    BRODERSEN, RW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C99 - C99
  • [8] CHARGE GENERATION AND BREAKDOWN IN SIO2
    TZOU, JJ
    YAO, CC
    CHEUNG, R
    CHAN, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C318 - C318
  • [9] CHARGE BUILD UP AND BREAKDOWN IN THIN SIO2 GATE DIELECTRICS
    HILLEN, MW
    DEKEERSMAECKER, RF
    HEYNS, MM
    HAYWOOD, SK
    DARAKCHIEV, IS
    IEEE TRANSACTIONS ON ELECTRICAL INSULATION, 1984, 19 (03): : 245 - 249
  • [10] Positive charging of thermal SiO2 layers:: hole trapping versus proton trapping
    Afanas'ev, VV
    Adriaenssens, GJ
    Stesmans, A
    MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) : 85 - 88
12345