CORRELATION OF BREAKDOWN SUSCEPTIBILITY IN THIN THERMAL SIO2 WITH PROCESS-DEPENDENT POSITIVE CHARGE TRAPPING

被引：0

作者：

HOLLAND, S ^{[1
]}

HU, C ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C101 / C101

页数：1

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