CORRELATION OF BREAKDOWN SUSCEPTIBILITY IN THIN THERMAL SIO2 WITH PROCESS-DEPENDENT POSITIVE CHARGE TRAPPING

被引：0
|
作者：
HOLLAND, S [1 ]
HU, C [1 ]
机构：
[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C101 / C101
页数：1
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