SILICON-ON-INSULATOR PRODUCED BY HELIUM IMPLANTATION AND THERMAL-OXIDATION

被引:15
|
作者
RAINERI, V
CAMPISANO, SU
机构
[1] CNR,IMETEM,I-95121 CATANIA,ITALY
[2] DIPARTIMENTO FIS,I-95129 CATANIA,ITALY
关键词
D O I
10.1063/1.114130
中图分类号
O59 [应用物理学];
学科分类号
摘要
A novel technique that produces a high quality low cost silicon-on-insulator is described. The method takes advantage of the formation of a buried porous layer in silicon implanted with light ions. Trenches are then formed in such a way that O2 can be transported into the cavities. Finally, an oxidation in dry O2 produces a buried oxide layer. Helium ions at energies of 40 or 300 keV and fluences up to 2×1017/cm2 were uniformly implanted into 5 in. silicon wafers. The oxidations were performed in a rapid thermal oxidation system by using dry O2 at a temperature of about 1000°C and for times up to 5 min. Transmission electron microscopy on cross sectional samples revealed that high quality buried oxide layers were formed and defect free single crystal silicon remained at the surface.© 1995 American Institute of Physics.
引用
收藏
页码:3654 / 3656
页数:3
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