Room-Temperature Anodic Oxidation of Silicon-on-Insulator Structures Produced by Hydrogen Transfer

被引：0
|
作者：
Tyschenko, Ida [1 ]
Popov, Igor [1 ]
Spesivtsev, Evgenij [1 ]
Popov, Vladimir [1 ]
机构：
[1] AV Rzhanov Inst Semicond Phys, Novosibirsk, Russia
来源：
2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2019年
基金：
俄罗斯基础研究基金会;
关键词：
silicon-on-insulator; anodic oxidation; hydrogen; ion implantation; vacancy micropores; DIFFUSION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Room temperature anodic oxidation of silicon-on-insulator structures produced by hydrogen transfer was investigated as a function of the subsequent annealing temperature. It was obtained that the oxidation rate of an as-transferred Si layer is five times lower than that of bulk monocrystalline silicon. The oxidation rate increases, as the annealing temperature growth above 700 degrees C. The activation energy of the oxidation rate growth is about 0.3 eV. The formation of hydrogen bubbles on the silicon surface was observed during oxidation. The obtained results have been interpreted in terms of the defect annealing and of the interaction of hydrogen produced during the oxidation reaction with the vacancy micropores in the transferred silicon layer.
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页数：4
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