CHARGE STORAGE PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE FILMS AND THE EFFECT OF INTERFACE STATES

被引：0

作者：

HEZEL, R ^{[1
]}

BAUCH, W ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH 6,D-8520 ERLANGEN,FED REP GER

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C350 / C350

页数：1

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