CHARGE STORAGE PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE FILMS AND THE EFFECT OF INTERFACE STATES

被引：0
|
作者：
HEZEL, R [1 ]
BAUCH, W [1 ]
机构：
[1] UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH 6,D-8520 ERLANGEN,FED REP GER
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C350 / C350
页数：1
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