10-GB/S SILICON BIPOLAR 8 1 MULTIPLEXER AND 1 8 DEMULTIPLEXER

被引:17
|
作者
STOUT, CL [1 ]
DOERNBERG, J [1 ]
机构
[1] HEWLETT PACKARD CO,DEPT HIGH SPEED ELECTR,PALO ALTO,CA 94304
关键词
Bipolar semiconductor devices;
D O I
10.1109/4.210001
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-speed multiplexer and demultiplexer circuits are key components in high-speed optical communication systems such as SONET. As optical communication link speeds increase, faster electronic interface circuitry is required. The use of multiplexer circuits allows most of the electronic circuitry to operate on parallel data at a lower speed, reducing the speed requirements of much of the system. This paper describes a retimed 8 : 1 multiplexer and a 1 : 8 demultiplexer which operate at 10 Gb/s. These circuits were fabricated in a high-speed silicon bipolar process. Design optimization techniques were used to achieve maximum performance. The retimed multiplexer and the demultiplexer dissipate 3.8 and 4.3 W, respectively.
引用
收藏
页码:339 / 343
页数:5
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