OPTICAL HEATING OF ELECTRON-HOLE PLASMA IN SILICON BY PICOSECOND PULSES

被引：38
|
作者：
LOMPRE, LA [1 ]
LIU, JM [1 ]
KURZ, H [1 ]
BLOEMBERGEN, N [1 ]
机构：
[1] HARVARD UNIV,GORDON MCKAY LAB,DIV APPL SCI,CAMBRIDGE,MA 02138
来源：
APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 01期
关键词：
D O I：
10.1063/1.94543
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3 / 5
页数：3
相关论文
共 50 条
  • [1] LIFETIME OF AN ELECTRON-HOLE PLASMA OF SILICON IN THE PICOSECOND RANGE
    RASOLT, M
    KURZ, H
    [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (07) : 722 - 724
  • [2] Picosecond strain pulses generated by a supersonically expanding electron-hole plasma in GaAs
    Young, E. S. K.
    Akimov, A. V.
    Campion, R. P.
    Kent, A. J.
    Gusev, V.
    [J]. PHYSICAL REVIEW B, 2012, 86 (15)
  • [3] STRATIFICATION OF AN ELECTRON-HOLE PLASMA ON HEATING
    KERNER, BS
    OSIPOV, VV
    [J]. ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1976, 71 (10): : 1542 - 1554
  • [4] INSTABILITY OF THE ELECTRON-HOLE PLASMA IN SILICON
    COMBESCOT, M
    BOK, J
    [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (20) : 1413 - 1416
  • [5] Recombination of an electron-hole plasma in silicon under the action of femtosecond laser pulses
    Ashitkov, SI
    Ovchinnikov, AV
    Agranat, MB
    [J]. JETP LETTERS, 2004, 79 (11) : 529 - 531
  • [6] Recombination of an electron-hole plasma in silicon under the action of femtosecond laser pulses
    S. I. Ashitkov
    A. V. Ovchinnikov
    M. B. Agranat
    [J]. Journal of Experimental and Theoretical Physics Letters, 2004, 79 : 529 - 531
  • [7] ELECTRON-HOLE PLASMA DYNAMICS IN CDTE IN THE PICOSECOND REGIME
    COLLET, JH
    RUHLE, WW
    PUGNET, M
    LEO, K
    MILLION, A
    [J]. PHYSICAL REVIEW B, 1989, 40 (18): : 12296 - 12303
  • [8] HEATING OF AN ELECTRON-HOLE PLASMA IN DOUBLE HETEROSTRUCTURES
    LUBASHEVSKII, IA
    RYZHII, VI
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (11): : 1295 - 1297
  • [9] OPTICAL FREE-CARRIER ABSORPTION OF AN ELECTRON-HOLE PLASMA IN SILICON
    SERNELIUS, BE
    [J]. PHYSICAL REVIEW B, 1989, 39 (15): : 10825 - 10830
  • [10] INSTABILITY OF THE ELECTRON-HOLE PLASMA IN SILICON - COMMENT
    BOCKING, VR
    JOHNSTONE, ES
    VANDRIEL, HM
    [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (02) : 205 - 205
12345