Recombination of an electron-hole plasma in silicon under the action of femtosecond laser pulses

被引：17

作者：

Ashitkov, SI ^{[1
]}

Ovchinnikov, AV ^{[1
]}

Agranat, MB ^{[1
]}

机构：

[1] Russian Acad Sci, Associated Inst High Temp, Inst High Energy Dens, Moscow 125412, Russia

来源：

JETP LETTERS | 2004年 / 79卷 / 11期

关键词：

D O I：

10.1134/1.1787099

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Experimental data are obtained on the dynamics of conduction-electron relaxation at the stage preceding the melting of a silicon surface layer. The energy of a quantum of probe radiation is smaller than the band gap, making it possible to obtain information about the electron-phonon relaxation processes for an electron concentration of similar to10(21) cm(-3) in the conduction band. (C) 2004 MAIK "Nauka / Interperiodica".

引用

页码：529 / 531

页数：3

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