Recombination of an electron-hole plasma in silicon under the action of femtosecond laser pulses

被引：0
|
作者：
S. I. Ashitkov
A. V. Ovchinnikov
M. B. Agranat
机构：
[1] Russian Academy of Sciences,Institute of High Energy Densities, Associated Institute for High Temperatures
来源：
Journal of Experimental and Theoretical Physics Letters | 2004年 / 79卷
关键词：
71.35.Ee; 79.20.Ds;
D O I：
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中图分类号：
学科分类号：
摘要：
Experimental data are obtained on the dynamics of conduction-electron relaxation at the stage preceding the melting of a silicon surface layer. The energy of a quantum of probe radiation is smaller than the band gap, making it possible to obtain information about the electron-phonon relaxation processes for an electron concentration of ∼ 1021 cm−3 in the conduction band.
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页码：529 / 531
页数：2
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