JUNCTIONS BETWEEN SPUTTER-DEPOSITED CDSE AND PARA-TYPE SILICON

被引：0

|

作者：

KOSHY, J

ALI, MP

TOVE, PA

机构：

来源：

THIN SOLID FILMS | 1982年 / 89卷 / 04期

关键词：

D O I：

10.1016/0040-6090(82)90314-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：380 / 380

页数：1

相关论文

共 50 条

[21] Thermal expansion coefficients and composition of sputter-deposited silicon oxynitride thin films
McKerracher, I. R.
Fu, L.
Tan, H. H.
Jagadish, C.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (33)
[22] THE EFFICIENCY OF GETTERING AU IN NORMAL-TYPE AND PARA-TYPE SILICON
JAWORSKA, D
SZYSZKO, W
TARNOWSKA, E
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (08) : 813 - 815
[23] ELECTRICAL-CONDUCTION AND DIELECTRIC-BREAKDOWN IN SPUTTER-DEPOSITED SILICON DIOXIDE FILMS ON SILICON
SUYAMA, S
OKAMOTO, A
SERIKAWA, T
TANIGAWA, H
JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) : 2360 - 2363
[24] DIELECTRIC FUNCTION OF SPUTTER-DEPOSITED SILICON DIOXIDE AND SILICON-NITRIDE FILMS IN THE THERMAL INFRARED
ERIKSSON, TS
JIANG, S
GRANQVIST, CG
APPLIED OPTICS, 1985, 24 (06): : 745 - 746
[25] HYDROGEN MOTION IN THERMALLY ANNEALED SPUTTER-DEPOSITED HYDROGENATED AMORPHOUS-SILICON
BEVOLO, AJ
ALBERS, ML
SHANKS, HR
SHINAR, J
JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) : 1240 - 1244
[26] ACCUMULATION KINETICS AND NATURE OF RADIATION DEFECTS IN PARA-TYPE SILICON
LUGAKOV, PF
LUKASHEVICH, TA
RADIATION PHYSICS AND CHEMISTRY, 1985, 26 (02): : 151 - 156
[27] ORIGIN OF THE LINEAR AND NONLINEAR PIEZORESISTANCE EFFECTS IN PARA-TYPE SILICON
SUZUKI, K
HASEGAWA, H
KANDA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11): : L871 - L874
[28] CARRIER LIFETIME DOPING OF PARA-TYPE SILICON BY ANNEALING PROCESSES
GRAFF, K
PIEPER, H
GOLDBACH, G
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) : C95 - &
[29] ANOTHER LOOK AT ANOMALOUS PHOTOTHERMOELECTRIC EFFECT IN PARA-TYPE SILICON
KWOK, H
JOURNAL OF APPLIED PHYSICS, 1970, 41 (12) : 5026 - &
[30] IONIZATION ENHANCED MIGRATION OF THE ISOLATED VACANCY IN PARA-TYPE SILICON
CHATTERJEE, AP
WATKINS, GD
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 325 - 325

← 1 2 3 4 5 →