SIO2 PLANARIZATION BY 2-STEP RF BIAS-SPUTTERING

被引：31
|
作者：
MOGAMI, T
MORIMOTO, M
OKABAYASHI, H
NAGASAWA, E
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 03期
关键词：
D O I：
10.1116/1.583116
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：857 / 861
页数：5
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