Photoluminescence emission from heteroestructures SiO2/Si/SiO2 growth by RF reactive sputtering

被引：0

作者：

Mota-Pineda, E. ^{[1
]}

Melendez Lira, M. ^{[1
]}

机构：

[1] CINVESTAV, Dept Phys, Apdo 17-740, Mexico City 07000, DF, Mexico

来源：

ADVANCED SUMMER SCHOOL IN PHYSICS 2006: FRONTIERS IN CONTEMPORARY PHYSICS | 2007年 / 885卷

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We prepared heterostructures SiO2/Si/SiO2 by RF sputtering on Si (100) and glass. We employed a polycrystalline Si target with Ar and O-2 as working gases. We investigate the effect of the partial pressure of oxygen and the thickness of the Si interlayer on the electronic properties of the heterostructures. A broad luminescent band (around 1.7 eV) appears by effect of the Si interlayer and its intensity increases with the Si layer thickness. The results were discussed in terms of a model of quantum confinement of Si embedded in a SiO2 matrix.

引用

页码：255 / +

页数：2

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