METHOD TO ELIMINATE DRIFT EFFECTS IN HALL-MOBILITY MEASUREMENTS

被引：0

作者：

VANCAMPENHOUT, JM ^{[1
]}

机构：

[1] STANFORD UNIV, STANFORD, CA 94305 USA

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1975年 / IM24卷 / 01期

关键词：

D O I：

10.1109/TIM.1975.4314366

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：39 / 42

页数：4

共 50 条

[21] INFLUENCE OF THE CONTACT RESISTANCE OF A TRANSITION LAYER ON MEASUREMENTS OF THE HALL-MOBILITY IN SEMICONDUCTOR-FILMS BY THE MAGNETORESISTANCE METHOD
EMELYANOV, AI
SEROVA, FG
YANKINA, AA
AKVILEV, BV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (08): : 951 - 952
[22] HOPPING HALL-MOBILITY IN DISORDERED SYSTEMS
BOTTGER, H
BRYKSIN, VV
SOLID STATE COMMUNICATIONS, 1977, 23 (04) : 227 - 231
[23] OPTICALLY ENHANCED HALL-MOBILITY IN GAAS
PAESLER, MA
QUEISSER, HJ
SOLID STATE COMMUNICATIONS, 1977, 21 (12) : 1143 - 1145
[24] THE HOPPING HALL-MOBILITY - A PERCOLATION APPROACH
GRUENEWALD, M
MUELLER, H
THOMAS, P
WUERTZ, D
SOLID STATE COMMUNICATIONS, 1981, 38 (11) : 1011 - 1014
[25] HALL-MOBILITY OF ELECTRONS IN LIQUID XENON
ASCARELLI, G
JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 4 (28) : 6055 - 6072
[26] HALL-MOBILITY OF ELECTRONS IN INSULATING LIQUIDS
ASCARELLI, G
PHYSICA B, 1995, 204 (1-4): : 95 - 104
[27] STUDY OF AN ANDERSON NEGATIVE - U SYSTEM BY MEANS OF HALL-MOBILITY MEASUREMENTS IN SILICON
BOGDANSKI, P
CARIN, R
CRUEGE, F
HAIRIE, A
MADELON, R
METZNER, MN
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1993, 126 (1-4): : 261 - 264
[28] HALL-MOBILITY AND HALL FACTOR OF IN0.53GA0.47AS
TAKEDA, Y
SASAKI, A
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) : 383 - 384
[29] HALL-MOBILITY IN AMORPHOUS AS-TE SYSTEM
PENNEY, T
GRANT, AJ
GAMBINO, RJ
MOUSTAKA.T
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 362 - 362
[30] CONTACTLESS METHOD OF MEASURING THE HALL-MOBILITY OF FREE CHARGE-CARRIERS IN SEMICONDUCTORS
SIDORIN, VV
SIDORIN, YV
INDUSTRIAL LABORATORY, 1990, 56 (10): : 1184 - 1188

← 1 2 3 4 5 →