INFLUENCE OF THE CONTACT RESISTANCE OF A TRANSITION LAYER ON MEASUREMENTS OF THE HALL-MOBILITY IN SEMICONDUCTOR-FILMS BY THE MAGNETORESISTANCE METHOD

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作者：

EMELYANOV, AI

SEROVA, FG

YANKINA, AA

AKVILEV, BV

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 08期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：951 / 952

页数：2

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[8] SEMICONDUCTOR CONTACT LAYER CHARACTERIZATION IN A CONTEXT OF HALL EFFECT MEASUREMENTS
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[J]. METROLOGY AND MEASUREMENT SYSTEMS, 2019, 26 (01) : 109 - 114
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[10] HALL-EFFECT MEASUREMENTS TO CALCULATE THE CONDUCTION CONTROL IN SEMICONDUCTOR-FILMS OF SNO2
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[J]. SENSORS AND ACTUATORS A-PHYSICAL, 1994, 42 (1-3) : 619 - 621

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