OBSERVATIONS ON INTERACTIONS BETWEEN METAL-CLUSTERS AND III-V SEMICONDUCTOR SUBSTRATES

被引：0
|
作者：
LOWES, TD
机构：
来源：
SCANNING MICROSCOPY | 1994年 / 8卷 / 04期
关键词：
COMPOUND SEMICONDUCTOR SUBSTRATES; METALS; INTERACTIONS; DECOMPOSITION;
D O I：
暂无
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
Interfacial reactions between deposited indium and gallium metals with GaAs(001) substrates are discussed. After Knudsen cell molecular beam epitaxy (MBE) deposition, samples were annealed in ultrahigh vacuum (UHV) and examined by ex situ electron microscopy. The resulting microstructure was compared to the microstructure of GaAs(001) substrates without metal deposition. It is shown that significant interactions occur between the deposited metal and substrate and that the final microstructure is consistent with the model for thermal decomposition of III-V compound semiconductor substrates.
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页码：773 / 780
页数：8
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